all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 9 rev. 04.1, 2016-06-22 pxfc192207fh thermally-enhanced high power rf ldmos fet 220 w, 28 v, 1805 C 1990 mhz description the pxfc192207fh is a 220-watt ldmos fet intended for use in multi-standard cellular power amplifer applications in the 1805 to 1990 mhz frequency band. features include input and output matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. pxfc192207fh package h-37288g-4/2 features ? broadband input and output matching ? typical pulsed cw performance, 1990 mhz, 28 v, 16 s pulse width, 10 % duty cycle, class ab - output power at p 1db = 220 w - effciency = 55% - gain = 20 db ? typical single-carrier wcdma performance, 1990 mhz, 28 v, 9.9 db par @ 0.01% ccdr - output power = 50 w - effciency = 29% - gain = 20 db - acpr = C34 dbc @ 5 mhz ? capable of handling 10:1 vswr @28 v, 220 w (cw) output power ? integrated esd protection : human body model, class 1c (per jesd22-a114) ? low thermal resistance ? pb-free and rohs compliant rf characteristics two-carrier wcdma specifcations (tested in infneon production test fxture) v dd = 28 v, i dq = 1600 ma, p out = 50 w avg, ? 1 = 1980 mhz, ? 2 = 1990 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit linear gain g ps 19 20.5 db drain effciency h d 29 32 % intermodulation distortion imd C32.5 C29 dbc 0 10 20 30 40 50 60 0 5 10 15 20 25 30 30 35 40 45 50 55 drain efficiency (%) gain (db) output power (dbm) two - carrier wcdma drive - up v dd = 28 v,i dq = 1600 ma, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 1930 mhz 1960 mhz 1990 mhz c192207fh_g1 gain efficiency
data sheet 2 of 9 rev. 04.1, 2016-06-22 pxfc192207fh dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 1 a v ds = 63 v, v gs = 0 v i dss 10 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 0.03 w operating gate voltage v ds = 28 v, i dq = 1.6 a v gs 2.3 2.6 2.9 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistanc e (t case = 70c, 200 w cw) r qjc 0.28 c/w ordering information type and version order code package description shipping pxfc192207fh v3 r0 pxfc192207fhv3r0xtma1 h-37288g-4/2, earless fange tape & reel, 50 pcs pxfc192207fh v3 r250 PXFC192207FHV3R250XTMA1 h-37288g-4/2, earless fange tape & reel, 250 pcs
pxfc192207fh data sheet 3 of 9 rev. 04.1, 2016-06-22 typical performance (data taken in a production test fxture) 0 10 20 30 40 50 60 - 65 - 55 - 45 - 35 - 25 - 15 - 5 30 35 40 45 50 55 drain efficiency (%) imd & acpr (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1600 ma, ? = 1990 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz imd low imd up acpr efficiency c192207fh_g2 - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 30 35 40 45 50 55 imd (dbc) output power (dbm) two - carrier wcdma drive - up v dd = 28 v, i dq = 1600 ma, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing, bw 3.84 mhz 1930 imdl 1930 imdu 1960 imdl 1960 imdu 1990 imdl 1990 imdu c192207fh_g3 0 10 20 30 40 50 60 16 17 18 19 20 21 22 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) pulsed cw performance at various v dd i dq = 1600 ma, ? = 1990 mhz vdd = 24 v vdd = 28 v vdd = 32 v gain efficiency c192207fh_g4 0 10 20 30 40 50 60 16 17 18 19 20 21 22 30 35 40 45 50 55 efficiency (%) gain (db) output power (dbm) pulsed cw performance i dq = 1600 ma, v dd = 28 v 1990 mhz 1960 mhz 1930 mhz efficiency gain c192207fh_g5
data sheet 4 of 9 rev. 04.1, 2016-06-22 pxfc192207fh typical performance (cont.) - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 1700 1800 1900 2000 2100 2200 2300 input return loss (db) gain (db) frequency (mhz) small signal, cw gain & input return loss v dd = 28 v, i dq = 1600 ma irl gain c192207fh_g6 see next page for broadband circuit impdedance
pxfc192207fh data sheet 5 of 9 rev. 04.1, 2016-06-22 each side load pull performance C pulsed cw signal: 16 s, 10% duty cycle, 28 v, 1100 ma p 1db max output power max pae freq [mhz] zs [ w] zl [w] gain [db] p out [dbm] p out [w] pae [%] zl [w] gain [db] p out [dbm] p out [w] pae [%] 1805 2.1Cj3.4 0.7Cj2.4 16.8 55.1 324 54.1 1.6Cj1.9 19.3 53.4 219 65.7 1880 2.1Cj3.3 0.7Cj2.5 17.6 55.0 316 54.4 1.6Cj1.9 20.3 53.0 200 65.0 1930 1.9Cj3.7 0.8Cj2.6 17.8 54.7 295 50.0 1.4Cj2.0 20.6 53.0 200 62.8 1990 3.8Cj4.1 0.7Cj2.8 18.4 54.6 288 50.8 1.4Cj2.1 21 52.8 191 61.7 load pull performance broadband circuit impedance z source z load g s d freq [mhz] z source w z load w r jx r jx 1930 3.12 C4.70 1.15 C2.80 1960 3.11 C4.62 1.14 C2.69 1990 3.10 C4.55 1.13 C2.58
data sheet 6 of 9 rev. 04.1, 2016-06-22 pxfc192207fh reference circuit , 1930 C 1990 mhz reference circuit assembly diagram (not to scale)* pxfc192207fh_out_02 rf_in rf _out v dd v dd c 205 c 204 c206 c208 c209 c202 c201 ro4350 , .020 (61) pxfc192207fh_in _02 ro 4350 , .020 (61) c203 + s3 c102 s 1 s 2 c101 c 103 c802 r102 r 101 r802 r801 r 803 r 804 c801 c207 c803 c 1 9 2 2 0 7 f h _ c d _ 0 4 - 3 0 - 2 0 1 3
pxfc192207fh data sheet 7 of 9 rev. 04.1, 2016-06-22 reference circuit (cont.) reference circuit assembly dut pxfc192207fh test fixture part no. ltn/pxfc192207fh v3 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1930 C 1990 mhz find gerber fles for this test fxture on the infneon web site at http://www.infneon.com/rfpower components information component description suggested manufacturer p/n input c101 capacitor, 10 f taiyo yuden umk325c7106mm-t c102, c103 capacitor, 33 pf atc atc100a330jw150xb c801, c802, c803 capacitor, 1000 pf panasonic electronic components ecj-1vb1h102k r101, r102, r801 resistor, 10 w panasonic electronic components erj-8geyj100v r802 resistor, 100 w panasonic electronic components erj-8geyj101v r803 resistor, 1300 w panasonic electronic components erj-3geyj132v r804 resistor, 1200 w panasonic electronic components erj-3geyj122v s1 transistor infneon technologies bcp56 s2 voltage regulator texas instruments lm78l05acm s3 potentiometer, 2k w bourns inc. 3224w-1-202e output c201, c202, c204, c206, c208, c209 capacitor, 10 f taiyo yuden umk325c7106mm-t c203, c207 capacitor, 220 f panasonic electronic components eee-fp1v221ap c205 capacitor, 33 pf atc atc100a330jw150xb
data sheet 8 of 9 rev. 04.1, 2016-06-22 pxfc192207fh package outline specifcations package h-37288g-4/2 find the latest and most complete information about products and packaging at the infneon internet page http://www.infneon.com/rfpower 2 x 2.29 [. 090 ] 1. 98 [. 078 ] 21. 72 [. 855 ] 2x 30. 0 4x r0. 51 +. 38 - . 13 [ r . 020 +. 015 - . 005 ] 2x 17 . 75 [. 699 ] c l c l c l 45 x . 64 [. 025 ] g d v v 4. 04 +0 . 25 - 0. 13 [ . 159 +. 010 - . 005 ] sph 1. 57 [. 062 ] 1. 02 [. 040 ] 23 . 11 [. 910 ] s 22 . 35 0.20 [. 880 . 008 ] 16. 760 . 51 [. 660 . 020 ] 9. 78 [. 385 ] 4 x 3.490.51 [. 138 . 020 ] c l h - 37288 g - 4 / 2 _ s l _ po _ 01 _ 07 - 18 - 2013 d diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source; v C v dd . 5. lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
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